NEW MODEL OF THE DIFFERENTIAL CAPACITANCE OF THE DOUBLE LAYER.

D. Price, J W Halley

Research output: Contribution to journalConference articlepeer-review

Abstract

A new model is presented for the metal-electrolyte interface which takes explicit account of the mobility of electrons at a metallic interface. The model can be described as a simple modification of the classical Stern-Gouy-Chapman double layer theory, but it contains an essential new feature of fundamentally quantum mechanical origin. A basic prediction of the theory is that at high enough temperatures the inverse 1/C//c of the compact part of the differential capacitance C//c is linear in the charge sigma //m per unit area for small sigma //m if adsorption does not occur. The authors confirm this for Hg, In, Ag, Cd and (Pb) with NaF (KF) electrolyte. The slope of the 1/C//c vs. sigma //m line is predicted in a simple model to be proportional to the inverse 1/ rho //m of the metallic charge density rho //m and predict the coefficient on the basis of two detailed models. The results are compared with experiment on a variety of metal electrolyte interfaces. The limitations of the theory are discussed.

Original languageEnglish (US)
Pages (from-to)347-353
Number of pages7
JournalJournal of electroanalytical chemistry and interfacial electrochemistry
Volume150
Issue number1 - 2
StatePublished - Jan 1 1982
EventElectron and Mol Struct of Electrode-Electrolyte Interfaces, Proc of the Int Conf - Logan, UT, USA
Duration: Jul 25 1982Jul 30 1982

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