Non-Gaussian noise statistics in undoped hydrogenated amorphous silicon

G. M. Khera, J. Kakalios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Measurements of coplanar conductance fluctuations in undoped a-Si:H are described. Statistical tests show that the 1/f noise is non-Gaussian and has a power-law frequency dependent second spectrum, as observed in n-type a-Si:H. By careful consideration of the thermal history of the sample, the noise statistics are found to be different above and below the equilibration temperature, which has been associated with hydrogen diffusion. These results suggest that the non-Gaussian noise in a-Si:H is influenced by the motion of bonded hydrogen and is not significantly dependent upon doping.

Original languageEnglish (US)
Title of host publicationAmorphous Silicon Technology - 1994
PublisherMaterials Research Society
Pages395-400
Number of pages6
ISBN (Print)1558992367, 9781558992368
DOIs
StatePublished - Jan 1 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 4 1994Apr 8 1994

Publication series

NameMaterials Research Society Symposium Proceedings
Volume336
ISSN (Print)0272-9172

Other

Other1994 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/4/944/8/94

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