TY - GEN
T1 - Non-Gaussian noise statistics in undoped hydrogenated amorphous silicon
AU - Khera, G. M.
AU - Kakalios, J.
PY - 1994
Y1 - 1994
N2 - Measurements of coplanar conductance fluctuations in undoped a-Si:H are described. Statistical tests show that the 1/f noise is non-Gaussian and has a power-law frequency dependent second spectrum, as observed in n-type a-Si:H. By careful consideration of the thermal history of the sample, the noise statistics are found to be different above and below the equilibration temperature, which has been associated with hydrogen diffusion. These results suggest that the non-Gaussian noise in a-Si:H is influenced by the motion of bonded hydrogen and is not significantly dependent upon doping.
AB - Measurements of coplanar conductance fluctuations in undoped a-Si:H are described. Statistical tests show that the 1/f noise is non-Gaussian and has a power-law frequency dependent second spectrum, as observed in n-type a-Si:H. By careful consideration of the thermal history of the sample, the noise statistics are found to be different above and below the equilibration temperature, which has been associated with hydrogen diffusion. These results suggest that the non-Gaussian noise in a-Si:H is influenced by the motion of bonded hydrogen and is not significantly dependent upon doping.
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U2 - 10.1557/proc-336-395
DO - 10.1557/proc-336-395
M3 - Conference contribution
AN - SCOPUS:84897674578
SN - 1558992367
SN - 9781558992368
T3 - Materials Research Society Symposium Proceedings
SP - 395
EP - 400
BT - Amorphous Silicon Technology - 1994
PB - Materials Research Society
T2 - 1994 MRS Spring Meeting
Y2 - 4 April 1994 through 8 April 1994
ER -