Abstract
We report the first experimental demonstration of a GaN cold cathode emitter that uses bandgap engineering to achieve low-voltage, room-temperature and durable emission from a flat surface. The device consists of a GaN pn junction and a thin layer of LaB6. The device achieves effective negative electron affinity by injecting electrons from the conduction band of a p-type wide handgap semiconductor into vacuum through an intermediary low workfunction material.
Original language | English (US) |
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Pages (from-to) | 729-732 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
State | Published - Dec 1 1997 |
Event | 1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997 |