Abstract
The operation of a three-terminal, laterally-patterned negative differential conductance (NDC) device, a hot-electron phonon-emission field-effect transistor (HEPEFET), fabricated in a high-mobility strained Si quantum well is presented. The HEPEFET device design consists of an etch-defined point contact or wire geometry. Bistable switching behavior is observed in both voltage- and current-controlled modes of operation. The ballistic nature of the electron transport makes the device potentially attractive for high-speed, low power circuit applications.
| Original language | English (US) |
|---|---|
| Title of host publication | Annual Device Research Conference Digest |
| Publisher | IEEE |
| Pages | 86-87 |
| Number of pages | 2 |
| State | Published - Jan 1 1997 |
| Event | Proceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA Duration: Jun 23 1997 → Jun 25 1997 |
Other
| Other | Proceedings of the 1997 55th Annual Device Research Conference |
|---|---|
| City | Fort Collins, CO, USA |
| Period | 6/23/97 → 6/25/97 |