Abstract
Spin precession and dephasing ("Hanle effect") provide an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport devices, illustrating the nontrivial consequences of employing oblique magnetic fields (due to misalignment or intentional, fixed in-plane field components) to measure the effects of spin precession. Model results are also calculated for Hanle measurements under conditions of diffusion-dominated transport, revealing an expected Hanle peak-widening effect induced by the presence of fixed in-plane magnetic bias fields.
Original language | English (US) |
---|---|
Article number | 142507 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 14 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
Bibliographical note
Copyright:Copyright 2008 Elsevier B.V., All rights reserved.