Observation of High Spin-to-Charge Conversion by Sputtered Bismuth Selenide Thin Films at Room Temperature

Mahendra Dc; Jun Yang Chen; Thomas Peterson; Protuysh Sahu; Bin Ma; Naser Mousavi; Ramesh Harjani; Jian Ping Wang

doi:10.1021/acs.nanolett.8b05011

Observation of High Spin-to-Charge Conversion by Sputtered Bismuth Selenide Thin Films at Room Temperature

Mahendra Dc, Jun Yang Chen, Thomas Peterson, Protuysh Sahu, Bin Ma, Naser Mousavi, Ramesh Harjani, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We investigated spin-to-charge conversion in sputtered Bi₄₃Se₅₇/Co₂₀Fe₆₀B₂₀ heterostructures with in-plane magnetization at room temperature. High spin-to-charge conversion voltage signals have been observed at room temperature. The transmission electron microscope images show that the sputtered bismuth selenide thin films are nanogranular in structure. The spin-pumping voltage decreases with an increase in the size of the grains. The inverse Edelstein effect length (λ_IEE) is estimated to be as large as 0.32 nm. The large λ_IEE is due to the spin-momentum locking and is further enhanced by quantum confinement in the nanosized grains of the sputtered bismuth selenide films. We also investigated the effect on spin-pumping voltage due to the insertion of layers of MgO and Ag. The MgO insertion layer has almost completely suppressed the spin-pumping voltage, whereas the Ag insertion layer has enhanced the λ_IEE by 43%.

Original language	English (US)
Pages (from-to)	4836-4844
Number of pages	9
Journal	Nano letters
Volume	19
Issue number	8
DOIs	https://doi.org/10.1021/acs.nanolett.8b05011
State	Published - Aug 14 2019

Bibliographical note

Funding Information:
This work was supported in part by ASCENT, one of six centers in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under award number ECCS-1542202.

Publisher Copyright:
© 2019 American Chemical Society.

Keywords

granular bismuth selenide
inverse Edelstein effect
quantum confinement effect
spin-to-charge conversion
topological insulator

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@article{c1e53156188e491f85d05fc2ec4d9d1b,

title = "Observation of High Spin-to-Charge Conversion by Sputtered Bismuth Selenide Thin Films at Room Temperature",

abstract = "We investigated spin-to-charge conversion in sputtered Bi43Se57/Co20Fe60B20 heterostructures with in-plane magnetization at room temperature. High spin-to-charge conversion voltage signals have been observed at room temperature. The transmission electron microscope images show that the sputtered bismuth selenide thin films are nanogranular in structure. The spin-pumping voltage decreases with an increase in the size of the grains. The inverse Edelstein effect length (λIEE) is estimated to be as large as 0.32 nm. The large λIEE is due to the spin-momentum locking and is further enhanced by quantum confinement in the nanosized grains of the sputtered bismuth selenide films. We also investigated the effect on spin-pumping voltage due to the insertion of layers of MgO and Ag. The MgO insertion layer has almost completely suppressed the spin-pumping voltage, whereas the Ag insertion layer has enhanced the λIEE by 43%.",

keywords = "granular bismuth selenide, inverse Edelstein effect, quantum confinement effect, spin-to-charge conversion, topological insulator",

author = "Mahendra Dc and Chen, {Jun Yang} and Thomas Peterson and Protuysh Sahu and Bin Ma and Naser Mousavi and Ramesh Harjani and Wang, {Jian Ping}",

note = "Funding Information: This work was supported in part by ASCENT, one of six centers in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under award number ECCS-1542202. Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = aug,

day = "14",

doi = "10.1021/acs.nanolett.8b05011",

language = "English (US)",

volume = "19",

pages = "4836--4844",

journal = "Nano letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Observation of High Spin-to-Charge Conversion by Sputtered Bismuth Selenide Thin Films at Room Temperature

AU - Dc, Mahendra

AU - Chen, Jun Yang

AU - Peterson, Thomas

AU - Sahu, Protuysh

AU - Ma, Bin

AU - Mousavi, Naser

AU - Harjani, Ramesh

AU - Wang, Jian Ping

N1 - Funding Information: This work was supported in part by ASCENT, one of six centers in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under award number ECCS-1542202. Publisher Copyright: © 2019 American Chemical Society.

PY - 2019/8/14

Y1 - 2019/8/14

N2 - We investigated spin-to-charge conversion in sputtered Bi43Se57/Co20Fe60B20 heterostructures with in-plane magnetization at room temperature. High spin-to-charge conversion voltage signals have been observed at room temperature. The transmission electron microscope images show that the sputtered bismuth selenide thin films are nanogranular in structure. The spin-pumping voltage decreases with an increase in the size of the grains. The inverse Edelstein effect length (λIEE) is estimated to be as large as 0.32 nm. The large λIEE is due to the spin-momentum locking and is further enhanced by quantum confinement in the nanosized grains of the sputtered bismuth selenide films. We also investigated the effect on spin-pumping voltage due to the insertion of layers of MgO and Ag. The MgO insertion layer has almost completely suppressed the spin-pumping voltage, whereas the Ag insertion layer has enhanced the λIEE by 43%.

AB - We investigated spin-to-charge conversion in sputtered Bi43Se57/Co20Fe60B20 heterostructures with in-plane magnetization at room temperature. High spin-to-charge conversion voltage signals have been observed at room temperature. The transmission electron microscope images show that the sputtered bismuth selenide thin films are nanogranular in structure. The spin-pumping voltage decreases with an increase in the size of the grains. The inverse Edelstein effect length (λIEE) is estimated to be as large as 0.32 nm. The large λIEE is due to the spin-momentum locking and is further enhanced by quantum confinement in the nanosized grains of the sputtered bismuth selenide films. We also investigated the effect on spin-pumping voltage due to the insertion of layers of MgO and Ag. The MgO insertion layer has almost completely suppressed the spin-pumping voltage, whereas the Ag insertion layer has enhanced the λIEE by 43%.

KW - granular bismuth selenide

KW - inverse Edelstein effect

KW - quantum confinement effect

KW - spin-to-charge conversion

KW - topological insulator

UR - http://www.scopus.com/inward/record.url?scp=85071353805&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85071353805&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.8b05011

DO - 10.1021/acs.nanolett.8b05011

M3 - Article

C2 - 31283247

AN - SCOPUS:85071353805

SN - 1530-6984

VL - 19

SP - 4836

EP - 4844

JO - Nano letters

JF - Nano letters

IS - 8

ER -

Observation of High Spin-to-Charge Conversion by Sputtered Bismuth Selenide Thin Films at Room Temperature

Abstract

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