Abstract
Light emitters based on real-space transfer devices can be brought about by several mechanisms. The most efficient of these is the injection of minority electrons across a semiconductor heterojunction into a p-type collecting layer. So far, problems associated with the growth of p-type collecting layers have hindered efforts in this area. In this letter we report on light emission caused by the real-space transfer of majority electrons into an n-type collecting layer. We propose a mechanism to account for this light which consists of hole creation by impact ionization of real-space transferred electrons.
Original language | English (US) |
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Pages (from-to) | 1342-1344 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 60 |
Issue number | 11 |
DOIs | |
State | Published - 1992 |