Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well

M. A. Zudov; O. A. Mironov; Q. A. Ebner; P. D. Martin; Q. Shi; D. R. Leadley

doi:10.1103/PhysRevB.89.125401

Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well

M. A. Zudov, O. A. Mironov, Q. A. Ebner, P. D. Martin, Q. Shi, D. R. Leadley

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.

Original language	English (US)
Article number	125401
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	89
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.89.125401
State	Published - Mar 4 2014

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title = "Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well",

abstract = "Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.",

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AU - Mironov, O. A.

AU - Ebner, Q. A.

AU - Martin, P. D.

AU - Shi, Q.

AU - Leadley, D. R.

PY - 2014/3/4

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N2 - Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.

AB - Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.

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Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well

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