Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice

G. H. Döhler, H. K̈nzel, D. Olego, K. Ploog, P. Ruden, H. J. Stolz, G. Abstreiter

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Abstract

Luminescence and Raman measurements on a new type of superlattice consisting of n- and p-type doped GaAs layers grown by molecular-beam epitaxy confirm crucial predictions of theory. A strongly tunable energy gap is found in luminescence. Raman experiments provide the first observation of electronic subbands in purely space-charge-induced quantum wells. A combined analysis of the luminescence and Raman data yields excellent agreement with self-consistent subband calculations based only on the design parameters of the sample.

Original languageEnglish (US)
Pages (from-to)864-867
Number of pages4
JournalPhysical review letters
Volume47
Issue number12
DOIs
StatePublished - 1981

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