On-chip silicon odometers and their potential use in medical electronics

John Keane, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The parametric shifts or circuit failures caused by transistor aging have become more severe with shrinking device sizes and voltage margins. Designing circuits that can withstand these aging effects is particularly critical in medical applications where systems must operate flawlessly across a range of conditions for their entire lifetimes. In this work we present several on-chip Silicon Odometers that provide measurement data required to develop transistor degradation models. One such scheme - a beat frequency detection circuit capable of recording oscillator frequency shifts ranging down to a theoretical limit of less than 0.01% - may be suited to trigger real-time adjustments that compensate for lost performance on products in the field. Incorporating this sensing capability may be especially attractive in implantable medical electronics.

Original languageEnglish (US)
Title of host publication2012 IEEE International Reliability Physics Symposium, IRPS 2012
Pages4C.1.1-4C.1.8
DOIs
StatePublished - Sep 28 2012
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States
Duration: Apr 15 2012Apr 19 2012

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
Country/TerritoryUnited States
CityAnaheim, CA
Period4/15/124/19/12

Keywords

  • Aging
  • circuit reliability
  • digital measurements

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