Abstract
The spatial distribution of scanning microscope conduction-mode signals in bulk specimen, with bias, is predicted by a one-dimensional theory in linear geometry devices. Micrographs of GaAs transferred-electron devices under different bias conditions confirm the theory. The evaluation of minority-carrier lifetime from such a study is also discussed.
| Original language | English (US) |
|---|---|
| Article number | 305 |
| Pages (from-to) | 467-472 |
| Number of pages | 6 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 3 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1970 |