On scanning-electron-microscope conduction-mode signals in bulk semiconductor devices: Linear geometry

A. Gopinath

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The spatial distribution of scanning microscope conduction-mode signals in bulk specimen, with bias, is predicted by a one-dimensional theory in linear geometry devices. Micrographs of GaAs transferred-electron devices under different bias conditions confirm the theory. The evaluation of minority-carrier lifetime from such a study is also discussed.

Original languageEnglish (US)
Article number305
Pages (from-to)467-472
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume3
Issue number4
DOIs
StatePublished - Dec 1 1970

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