Abstract
The optical absorption coefficient α of doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured for photon energies from 2.2 to 1.0 eV using photo-pyroelectric spectroscopy (PPES). A simplified experimental setup and analysis for extracting α from the PPES data are described. In PPES the temperature rise induced in the a-Si:H thin film due to weakly absorbed light is detected via a pyroelectric polymer in thermal contact with the sample. This technique presently has a sensitivity of αd≳10-3, where d is the sample thickness.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1799-1804 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 74 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1993 |