Optimized dielectric properties of SrTiO 3: Nb/SrTiO 3 (001) films for high field effect charge densities

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Abstract

The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

Original languageEnglish (US)
Article number242915
JournalApplied Physics Letters
Volume89
Issue number24
DOIs
StatePublished - 2006

Bibliographical note

Funding Information:
This work was supported by NSF Grant No. 0509666 and the NSF MRSEC. K.C. would like to acknowledge Jeff Parker for advice on sputtering.

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