Optimized dielectric properties of SrTiO 3: Nb/SrTiO 3 (001) films for high field effect charge densities

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The authors report the growth, structural and electrical characterizations of SrTi O3 films deposited on conductive SrTi O3: Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ∼200 (for a thickness of 1150 Å). The breakdown fields in SrTi O3: NbSrTi O3 Ag capacitors are consistent with induced charge densities >1× 1014 cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

Original languageEnglish (US)
Article number242915
JournalApplied Physics Letters
Issue number24
StatePublished - 2006

Bibliographical note

Funding Information:
This work was supported by NSF Grant No. 0509666 and the NSF MRSEC. K.C. would like to acknowledge Jeff Parker for advice on sputtering.

Copyright 2011 Elsevier B.V., All rights reserved.


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