Outlook and opportunities for hetero-epitaxy in SI CMOS technology and beyond

S. J. Koester

Outlook and opportunities for hetero-epitaxy in SI CMOS technology and beyond

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An overview of promising applications of Si/SiGe hetero-epitaxy for mainstream CMOS technology is presented. First, near-term applications of SiGe hetero-epitaxy, such as raised SiGe source-drain contacts, are reviewed. Next, the application of hetero-epitaxy to strained Si CMOS is reviewed, including a discussion of devices that utilize both global and local strain. Quantum well heterostructure devices such as buried-channel MOSFETs and MODFETs are also reviewed. Finally, novel hetero-epitaxial devices that could be enabled by the widespread availability of hetero-epitaxy in CMOS technology are described.

Original language	English (US)
Title of host publication	SiGe
Subtitle of host publication	Materials, Processing, and Devices - Proceedings of the First Symposium
Editors	D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, B. Tillack
Pages	785-788
Number of pages	4
Volume	7
State	Published - Dec 1 2004
Event	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Other

Other	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

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Outlook and opportunities for hetero-epitaxy in SI CMOS technology and beyond. / Koester, S. J.
SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium. ed. / D. Harame; J. Boquet; J. Cressler; D. Houghton; H. Iwai; T.-J. King; G. Masini; J. Murota; K. Rim; B. Tillack. Vol. 7 2004. p. 785-788 12.1.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koester, SJ 2004, Outlook and opportunities for hetero-epitaxy in SI CMOS technology and beyond. in D Harame, J Boquet, J Cressler, D Houghton, H Iwai, T-J King, G Masini, J Murota, K Rim & B Tillack (eds), SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium. vol. 7, 12.1, pp. 785-788, SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States, 10/3/04.

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Outlook and opportunities for hetero-epitaxy in SI CMOS technology and beyond

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