Ozone ALD of doped ZnO as a transparent metal

Hai Yuan; Bing Luo; Wayne L. Gladfelter; Stephen A. Campbell

doi:10.1149/1.3700904

Ozone ALD of doped ZnO as a transparent metal

Hai Yuan, Bing Luo, Wayne L. Gladfelter, Stephen A. Campbell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

The rapidly escalating cost of indium tin oxide has led to search for lower cost transparent conductor options such as heavily doped zinc oxide. Here we study the donors aluminum (AZO) and gallium (GZO), as well as phosphorus (PZO) which is n-type as-deposited, but converts to p-type with a suitable anneal. We present the results of atomic layer deposition (ALD) of AZO, GZO, and PZO with ozone as the oxidant. The metal-containing precursors were diethyl zinc, trimethyl aluminum, triethylgallium and trimethylphosphite. Homogeneous and layered structures are compared. Homogeneous films with about 2% aluminum or gallium were found to have the lowest resistivity (∼0.5 milliohm-cm). For PZO, the lowest resistivity was found to occur for films with 3.2%P when annealed at 750°C (0.46 ohm-cm).

Original language	English (US)
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	389-400
Number of pages	12
Edition	3
ISBN (Electronic)	9781607683131
ISBN (Print)	9781566779555
DOIs	https://doi.org/10.1149/1.3700904
State	Published - 2012
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: May 6 2012 → May 10 2012

Publication series

Name	ECS Transactions
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	5/6/12 → 5/10/12

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Yuan, H., Luo, B., Gladfelter, W. L., & Campbell, S. A. (2012). Ozone ALD of doped ZnO as a transparent metal. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 389-400). (ECS Transactions; Vol. 45, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700904

Ozone ALD of doped ZnO as a transparent metal. / Yuan, Hai; Luo, Bing ; Gladfelter, Wayne L. et al.
Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. p. 389-400 (ECS Transactions; Vol. 45, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yuan, H, Luo, B , Gladfelter, WL & Campbell, SA 2012, Ozone ALD of doped ZnO as a transparent metal. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, Electrochemical Society Inc., pp. 389-400, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 5/6/12. https://doi.org/10.1149/1.3700904

Yuan H, Luo B , Gladfelter WL , Campbell SA. Ozone ALD of doped ZnO as a transparent metal. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Electrochemical Society Inc. 2012. p. 389-400. (ECS Transactions; 3). doi: 10.1149/1.3700904

Yuan, Hai ; Luo, Bing ; Gladfelter, Wayne L. et al. / Ozone ALD of doped ZnO as a transparent metal. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. pp. 389-400 (ECS Transactions; 3).

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Ozone ALD of doped ZnO as a transparent metal

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