Paramagnetic NO 2 centers in thin γ-irradiated HfO 2 layers on (100)Si revealed by electron spin resonance

A. Stesmans; V. V. Afanas'ev; F. Chen; S. A. Campbell

doi:10.1063/1.1695435

Paramagnetic NO ₂ centers in thin γ-irradiated HfO ₂ layers on (100)Si revealed by electron spin resonance

A. Stesmans, V. V. Afanas'ev, F. Chen, S. A. Campbell

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The incorporation of N atoms during the deposition of thin HfO ₂ films on (100)Si through NCVD using the Hf(NO ₃) ₄ was analyzed using electron spin resonance measurements. The centers appearing upon γ-irradiation were identified as embedded NO ₂ radicals. The molecules were stabilized and homogenously distributed in the HfO ₂ network. The N incorporation appeared inherent to the particular NCVD process. The network forming N entity was found to be a precursor, transformed into ESR-active NO ₂ upon γ-irradiation.

Original language	English (US)
Pages (from-to)	4574-4576
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	22
DOIs	https://doi.org/10.1063/1.1695435
State	Published - May 31 2004

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title = "Paramagnetic NO 2 centers in thin γ-irradiated HfO 2 layers on (100)Si revealed by electron spin resonance",

abstract = "The incorporation of N atoms during the deposition of thin HfO 2 films on (100)Si through NCVD using the Hf(NO 3) 4 was analyzed using electron spin resonance measurements. The centers appearing upon γ-irradiation were identified as embedded NO 2 radicals. The molecules were stabilized and homogenously distributed in the HfO 2 network. The N incorporation appeared inherent to the particular NCVD process. The network forming N entity was found to be a precursor, transformed into ESR-active NO 2 upon γ-irradiation.",

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AU - Stesmans, A.

AU - Afanas'ev, V. V.

AU - Chen, F.

AU - Campbell, S. A.

PY - 2004/5/31

Y1 - 2004/5/31

N2 - The incorporation of N atoms during the deposition of thin HfO 2 films on (100)Si through NCVD using the Hf(NO 3) 4 was analyzed using electron spin resonance measurements. The centers appearing upon γ-irradiation were identified as embedded NO 2 radicals. The molecules were stabilized and homogenously distributed in the HfO 2 network. The N incorporation appeared inherent to the particular NCVD process. The network forming N entity was found to be a precursor, transformed into ESR-active NO 2 upon γ-irradiation.

AB - The incorporation of N atoms during the deposition of thin HfO 2 films on (100)Si through NCVD using the Hf(NO 3) 4 was analyzed using electron spin resonance measurements. The centers appearing upon γ-irradiation were identified as embedded NO 2 radicals. The molecules were stabilized and homogenously distributed in the HfO 2 network. The N incorporation appeared inherent to the particular NCVD process. The network forming N entity was found to be a precursor, transformed into ESR-active NO 2 upon γ-irradiation.

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Paramagnetic NO ₂ centers in thin γ-irradiated HfO ₂ layers on (100)Si revealed by electron spin resonance

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