Paramagnetic NO 2 centers in thin γ-irradiated HfO 2 layers on (100)Si revealed by electron spin resonance

A. Stesmans, V. V. Afanas'ev, F. Chen, S. A. Campbell

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The incorporation of N atoms during the deposition of thin HfO 2 films on (100)Si through NCVD using the Hf(NO 3) 4 was analyzed using electron spin resonance measurements. The centers appearing upon γ-irradiation were identified as embedded NO 2 radicals. The molecules were stabilized and homogenously distributed in the HfO 2 network. The N incorporation appeared inherent to the particular NCVD process. The network forming N entity was found to be a precursor, transformed into ESR-active NO 2 upon γ-irradiation.

Original languageEnglish (US)
Pages (from-to)4574-4576
Number of pages3
JournalApplied Physics Letters
Issue number22
StatePublished - May 31 2004

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