Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness

Sandeep Nijhawan; Peter H. McMurry; Stephen A. Campbell

doi:10.1116/1.1288193

Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness

Sandeep Nijhawan, Peter H. McMurry, Stephen A. Campbell

Research output: Contribution to journal › Conference article › peer-review

12 Scopus citations

Abstract

The particle transport in parallel-plate chemical vapor deposition (CVD) reactors was discussed. Measurements showing particle transport in the reactor were presented and studied using a Eulerian continuum particle transport formulation. The results showed that particles formed in the parallel-plate region were confined in a thin sheath between the hot wafer and cold showerhead inlet.

Original language	English (US)
Pages (from-to)	2198-2206
Number of pages	9
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	5
DOIs	https://doi.org/10.1116/1.1288193
State	Published - Sep 2000
Event	47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA Duration: Oct 2 2000 → Oct 6 2000

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Copyright 2008 Elsevier B.V., All rights reserved.

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Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness. / Nijhawan, Sandeep; McMurry, Peter H.; Campbell, Stephen A.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 18, No. 5, 09.2000, p. 2198-2206.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "The particle transport in parallel-plate chemical vapor deposition (CVD) reactors was discussed. Measurements showing particle transport in the reactor were presented and studied using a Eulerian continuum particle transport formulation. The results showed that particles formed in the parallel-plate region were confined in a thin sheath between the hot wafer and cold showerhead inlet.",

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AB - The particle transport in parallel-plate chemical vapor deposition (CVD) reactors was discussed. Measurements showing particle transport in the reactor were presented and studied using a Eulerian continuum particle transport formulation. The results showed that particles formed in the parallel-plate region were confined in a thin sheath between the hot wafer and cold showerhead inlet.

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Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness

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