Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).
Bibliographical noteFunding Information:
The authors thank Nissan Chemical Industries, Lam Research, the ASTC, and the National Science Foundation (Grants EECS-1120823 and EEC-1160494) for financial support. The authors thank Michael T. Sheehan of Dupont Electronic Technologies for helpful discussions on RAFT polymerization. The authors also thank Robert Grubbs. MJM thanks National Science Foundation Graduate Research Fellowship (Grant No. DGE-1110007) for financial support. G.B. thanks the Paul D.Meek Endowed Graduate Fellowship in Engineering for support. W.J.D. thanks the Virginia and Ernest Cockrell, Jr. Fellowships in Engineering for partial support. C.J.E. thanks the Welch Foundation (Grant #F-1709) for partial financial support. G.W. thanks the Rashid Engineering Regents Chair and the Welch Foundation (Grant #F-1830) for partial financial support. Any opinion, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation or the sponsors. This research used resources of the Advanced Photon Source, a U.S. DOE Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357.
© 2016 American Chemical Society.