Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Michael J. Maher; Kazunori Mori; Stephen M. Sirard; Andrew M. Dinhobl; Christopher M. Bates; Emir Gurer; Gregory Blachut; Austin P. Lane; William J. Durand; Matthew C. Carlson; Jeffrey R. Strahan; Christopher J. Ellison; C. Grant Willson

doi:10.1021/acsmacrolett.6b00005

Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Michael J. Maher, Kazunori Mori, Stephen M. Sirard, Andrew M. Dinhobl, Christopher M. Bates, Emir Gurer, Gregory Blachut, Austin P. Lane, William J. Durand, Matthew C. Carlson, Jeffrey R. Strahan, Christopher J. Ellison, C. Grant Willson

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO₂ via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

Original language	English (US)
Pages (from-to)	391-395
Number of pages	5
Journal	ACS Macro Letters
Volume	5
Issue number	3
DOIs	https://doi.org/10.1021/acsmacrolett.6b00005
State	Published - Mar 15 2016

Bibliographical note

Funding Information:
The authors thank Nissan Chemical Industries, Lam Research, the ASTC, and the National Science Foundation (Grants EECS-1120823 and EEC-1160494) for financial support. The authors thank Michael T. Sheehan of Dupont Electronic Technologies for helpful discussions on RAFT polymerization. The authors also thank Robert Grubbs. MJM thanks National Science Foundation Graduate Research Fellowship (Grant No. DGE-1110007) for financial support. G.B. thanks the Paul D.Meek Endowed Graduate Fellowship in Engineering for support. W.J.D. thanks the Virginia and Ernest Cockrell, Jr. Fellowships in Engineering for partial support. C.J.E. thanks the Welch Foundation (Grant #F-1709) for partial financial support. G.W. thanks the Rashid Engineering Regents Chair and the Welch Foundation (Grant #F-1830) for partial financial support. Any opinion, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation or the sponsors. This research used resources of the Advanced Photon Source, a U.S. DOE Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357.

Publisher Copyright:
© 2016 American Chemical Society.

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title = "Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers",

abstract = "Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).",

author = "Maher, {Michael J.} and Kazunori Mori and Sirard, {Stephen M.} and Dinhobl, {Andrew M.} and Bates, {Christopher M.} and Emir Gurer and Gregory Blachut and Lane, {Austin P.} and Durand, {William J.} and Carlson, {Matthew C.} and Strahan, {Jeffrey R.} and Ellison, {Christopher J.} and Willson, {C. Grant}",

note = "Funding Information: The authors thank Nissan Chemical Industries, Lam Research, the ASTC, and the National Science Foundation (Grants EECS-1120823 and EEC-1160494) for financial support. The authors thank Michael T. Sheehan of Dupont Electronic Technologies for helpful discussions on RAFT polymerization. The authors also thank Robert Grubbs. MJM thanks National Science Foundation Graduate Research Fellowship (Grant No. DGE-1110007) for financial support. G.B. thanks the Paul D.Meek Endowed Graduate Fellowship in Engineering for support. W.J.D. thanks the Virginia and Ernest Cockrell, Jr. Fellowships in Engineering for partial support. C.J.E. thanks the Welch Foundation (Grant #F-1709) for partial financial support. G.W. thanks the Rashid Engineering Regents Chair and the Welch Foundation (Grant #F-1830) for partial financial support. Any opinion, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation or the sponsors. This research used resources of the Advanced Photon Source, a U.S. DOE Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

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doi = "10.1021/acsmacrolett.6b00005",

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AU - Maher, Michael J.

AU - Mori, Kazunori

AU - Sirard, Stephen M.

AU - Dinhobl, Andrew M.

AU - Bates, Christopher M.

AU - Gurer, Emir

AU - Blachut, Gregory

AU - Lane, Austin P.

AU - Durand, William J.

AU - Carlson, Matthew C.

AU - Strahan, Jeffrey R.

AU - Ellison, Christopher J.

AU - Willson, C. Grant

N1 - Funding Information: The authors thank Nissan Chemical Industries, Lam Research, the ASTC, and the National Science Foundation (Grants EECS-1120823 and EEC-1160494) for financial support. The authors thank Michael T. Sheehan of Dupont Electronic Technologies for helpful discussions on RAFT polymerization. The authors also thank Robert Grubbs. MJM thanks National Science Foundation Graduate Research Fellowship (Grant No. DGE-1110007) for financial support. G.B. thanks the Paul D.Meek Endowed Graduate Fellowship in Engineering for support. W.J.D. thanks the Virginia and Ernest Cockrell, Jr. Fellowships in Engineering for partial support. C.J.E. thanks the Welch Foundation (Grant #F-1709) for partial financial support. G.W. thanks the Rashid Engineering Regents Chair and the Welch Foundation (Grant #F-1830) for partial financial support. Any opinion, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation or the sponsors. This research used resources of the Advanced Photon Source, a U.S. DOE Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. Publisher Copyright: © 2016 American Chemical Society.

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N2 - Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

AB - Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

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Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

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