PERCOLATION LEVEL OF A LIGHTLY DOPED SEMICONDUCTOR.

Van Lien Nguyen Van Lien, B. I. Shklovskii

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The Monte Carlo method is used to determine the distribution of the potential energy of an electron at the bottom of the conduction band of a lightly doped compensated semiconductor kept at low temperature. The percolation level is calculated for different degrees of compensation in the range 0. 1 less than equivalent to K less than equivalent to 0. 95. A calculation is made of the activation energy correction //69 //1 associated with doping and compensation. A comparison is made with the experimental results.

Original languageEnglish (US)
Pages (from-to)1025-1029
Number of pages5
JournalSoviet physics. Semiconductors
Volume13
Issue number9
StatePublished - Jan 1 1979

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