Performance assessment of Ge-on-SOI-photodetector / Si-CMOS receivers for high-speed optical communications

S. J. Koester; L. Schares; C. L. Schow; J. D. Schaub; G. Dehlinger; F. E. Doany; R. A. John; J. O. Chu

doi:10.1149/1.2355798

Performance assessment of Ge-on-SOI-photodetector / Si-CMOS receivers for high-speed optical communications

S. J. Koester, L. Schares, C. L. Schow, J. D. Schaub, G. Dehlinger, F. E. Doany, R. A. John, J. O. Chu

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper provides an assessment of the performance capabilities of infrared detectors and receivers using Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and CMOS ICs. An overview of our recent results on these detectors is given, and an estimate of their performance capabilities based upon an optimized layer structure design is described. We also provide an overview of high-performance receivers that utilize Ge-on-SOI photodiodes paired with Si CMOS amplifier ICs, and describe the materials and integration challenges needed to be overcome in order to develop a full monolithically-integrated technology. copyright The Electrochemical Society.

Original language	English (US)
Pages (from-to)	99-109
Number of pages	11
Journal	ECS Transactions
Volume	3
Issue number	7
DOIs	https://doi.org/10.1149/1.2355798
State	Published - 2006
Event	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

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title = "Performance assessment of Ge-on-SOI-photodetector / Si-CMOS receivers for high-speed optical communications",

abstract = "This paper provides an assessment of the performance capabilities of infrared detectors and receivers using Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and CMOS ICs. An overview of our recent results on these detectors is given, and an estimate of their performance capabilities based upon an optimized layer structure design is described. We also provide an overview of high-performance receivers that utilize Ge-on-SOI photodiodes paired with Si CMOS amplifier ICs, and describe the materials and integration challenges needed to be overcome in order to develop a full monolithically-integrated technology. copyright The Electrochemical Society.",

author = "Koester, {S. J.} and L. Schares and Schow, {C. L.} and Schaub, {J. D.} and G. Dehlinger and Doany, {F. E.} and John, {R. A.} and Chu, {J. O.}",

year = "2006",

doi = "10.1149/1.2355798",

language = "English (US)",

volume = "3",

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journal = "ECS Transactions",

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note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

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TY - JOUR

T1 - Performance assessment of Ge-on-SOI-photodetector / Si-CMOS receivers for high-speed optical communications

AU - Koester, S. J.

AU - Schares, L.

AU - Schow, C. L.

AU - Schaub, J. D.

AU - Dehlinger, G.

AU - Doany, F. E.

AU - John, R. A.

AU - Chu, J. O.

PY - 2006

Y1 - 2006

N2 - This paper provides an assessment of the performance capabilities of infrared detectors and receivers using Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and CMOS ICs. An overview of our recent results on these detectors is given, and an estimate of their performance capabilities based upon an optimized layer structure design is described. We also provide an overview of high-performance receivers that utilize Ge-on-SOI photodiodes paired with Si CMOS amplifier ICs, and describe the materials and integration challenges needed to be overcome in order to develop a full monolithically-integrated technology. copyright The Electrochemical Society.

AB - This paper provides an assessment of the performance capabilities of infrared detectors and receivers using Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and CMOS ICs. An overview of our recent results on these detectors is given, and an estimate of their performance capabilities based upon an optimized layer structure design is described. We also provide an overview of high-performance receivers that utilize Ge-on-SOI photodiodes paired with Si CMOS amplifier ICs, and describe the materials and integration challenges needed to be overcome in order to develop a full monolithically-integrated technology. copyright The Electrochemical Society.

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ER -

Performance assessment of Ge-on-SOI-photodetector / Si-CMOS receivers for high-speed optical communications

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