Performance of high permittivity TiO2 dielectric MOSFETs

S. A. Campbell, D. C. Gilmer, X. Wang, M. T. Hsieh, H. S. Kim, W. L. Gladfelter, J. H. Yan

Research output: Contribution to conferencePaperpeer-review

Abstract

The use of the lattice polarizable material TiO2 as a possible SiO2 replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6% of the film thickness.

Original languageEnglish (US)
Pages106-107
Number of pages2
StatePublished - 1996
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

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