Performance of high permittivity TiO2 dielectric MOSFETs

S. A. Campbell; D. C. Gilmer; X. Wang; M. T. Hsieh; H. S. Kim; W. L. Gladfelter; J. H. Yan

Performance of high permittivity TiO₂ dielectric MOSFETs

S. A. Campbell, D. C. Gilmer, X. Wang, M. T. Hsieh, H. S. Kim, W. L. Gladfelter, J. H. Yan

Chemistry (Twin Cities)

Research output: Contribution to conference › Paper › peer-review

Abstract

The use of the lattice polarizable material TiO₂ as a possible SiO₂ replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6% of the film thickness.

Original language	English (US)
Pages	106-107
Number of pages	2
State	Published - 1996
Event	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA Duration: Jun 24 1996 → Jun 26 1996

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Other	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC
City	Santa Barbara, CA, USA
Period	6/24/96 → 6/26/96

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title = "Performance of high permittivity TiO2 dielectric MOSFETs",

abstract = "The use of the lattice polarizable material TiO2 as a possible SiO2 replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6% of the film thickness.",

author = "Campbell, {S. A.} and Gilmer, {D. C.} and X. Wang and Hsieh, {M. T.} and Kim, {H. S.} and Gladfelter, {W. L.} and Yan, {J. H.}",

year = "1996",

language = "English (US)",

pages = "106--107",

note = "Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC ; Conference date: 24-06-1996 Through 26-06-1996",

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TY - CONF

T1 - Performance of high permittivity TiO2 dielectric MOSFETs

AU - Campbell, S. A.

AU - Gilmer, D. C.

AU - Wang, X.

AU - Hsieh, M. T.

AU - Kim, H. S.

AU - Gladfelter, W. L.

AU - Yan, J. H.

PY - 1996

Y1 - 1996

N2 - The use of the lattice polarizable material TiO2 as a possible SiO2 replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6% of the film thickness.

AB - The use of the lattice polarizable material TiO2 as a possible SiO2 replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6% of the film thickness.

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M3 - Paper

AN - SCOPUS:0029703213

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EP - 107

T2 - Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC

Y2 - 24 June 1996 through 26 June 1996

ER -

Performance of high permittivity TiO₂ dielectric MOSFETs

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