Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

Roberto Grassi; Stefano Poli; Susanna Reggiani; Elena Gnani; Antonio Gnudi; Giorgio Baccarani

doi:10.1016/j.sse.2008.04.010

Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

Roberto Grassi, Stefano Poli, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-κ dielectric lowers the off-current dominated by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with the oxide thickness fixed to 1.5 nm, good performance is obtained with 15 nm and 10 nm gate lengths with SiO₂ and HfO₂ gate dielectrics, respectively. The role of phonon scattering in CNT-FETs of different chiralities is investigated for the HfO₂ devices. A similar analysis has also been carried out for source/drain underlap geometries. The results confirm that the calculation of the off-currents and delay times is strongly influenced by phonon scattering.

Original language	English (US)
Pages (from-to)	1329-1335
Number of pages	7
Journal	Solid-State Electronics
Volume	52
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2008.04.010
State	Published - Sep 2008

Bibliographical note

Funding Information:
The work has been partially supported by EU IST Network SINANO (Contract No. 506844) and PULLNANO project (FP6 IST-026828-IP).

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

Band-to-band tunneling
Carbon nanotube
Non-equilibrium Green's function formalism
Phonon scattering
Quantum transport

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title = "Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials",

abstract = "The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-κ dielectric lowers the off-current dominated by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with the oxide thickness fixed to 1.5 nm, good performance is obtained with 15 nm and 10 nm gate lengths with SiO2 and HfO2 gate dielectrics, respectively. The role of phonon scattering in CNT-FETs of different chiralities is investigated for the HfO2 devices. A similar analysis has also been carried out for source/drain underlap geometries. The results confirm that the calculation of the off-currents and delay times is strongly influenced by phonon scattering.",

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author = "Roberto Grassi and Stefano Poli and Susanna Reggiani and Elena Gnani and Antonio Gnudi and Giorgio Baccarani",

note = "Funding Information: The work has been partially supported by EU IST Network SINANO (Contract No. 506844) and PULLNANO project (FP6 IST-026828-IP). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Grassi, Roberto

AU - Poli, Stefano

AU - Reggiani, Susanna

AU - Gnani, Elena

AU - Gnudi, Antonio

AU - Baccarani, Giorgio

N1 - Funding Information: The work has been partially supported by EU IST Network SINANO (Contract No. 506844) and PULLNANO project (FP6 IST-026828-IP). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008/9

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N2 - The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-κ dielectric lowers the off-current dominated by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with the oxide thickness fixed to 1.5 nm, good performance is obtained with 15 nm and 10 nm gate lengths with SiO2 and HfO2 gate dielectrics, respectively. The role of phonon scattering in CNT-FETs of different chiralities is investigated for the HfO2 devices. A similar analysis has also been carried out for source/drain underlap geometries. The results confirm that the calculation of the off-currents and delay times is strongly influenced by phonon scattering.

AB - The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-κ dielectric lowers the off-current dominated by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with the oxide thickness fixed to 1.5 nm, good performance is obtained with 15 nm and 10 nm gate lengths with SiO2 and HfO2 gate dielectrics, respectively. The role of phonon scattering in CNT-FETs of different chiralities is investigated for the HfO2 devices. A similar analysis has also been carried out for source/drain underlap geometries. The results confirm that the calculation of the off-currents and delay times is strongly influenced by phonon scattering.

KW - Band-to-band tunneling

KW - Carbon nanotube

KW - Non-equilibrium Green's function formalism

KW - Phonon scattering

KW - Quantum transport

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JO - Solid-State Electronics

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Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

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