Photonic curing of solution-processed oxide semiconductors with efficient gate absorbers and minimal substrate heating for high-performance thin-film transistors

Engineering & Materials Science

• Thin film transistors 100%
• Oxide semiconductors 92%
• Photonics 89%
• Sol-gels 85%
• Heating 56%
• Substrates 55%
• Zinc oxide 34%
• Indium 33%
• Oxides 33%
• Metals 33%
• Oxide films 32%
• Annealing 12%
• Hot Temperature 12%
• Thin films 12%
• Ions 12%
• Temperature 10%

Chemical Compounds

• Curing 72%
• Semiconductor 59%
• Oxide 42%
• Metal Oxide 37%
• Zinc Oxide 21%
• Field Effect 11%
• Liquid Film 10%
• White 9%
• Annealing 8%
• Compound Mobility 8%
• Heat 8%
• Simulation 7%
• Energy 5%
• Reduction 5%
• Reaction Yield 4%
• Ion 4%
• Time 4%
• Surface 3%
• Application 3%