Photoreflectance of AlxGa1-xAs and Al xGa1-xAs/GaAs interfaces and high-electron-mobility transistors

Michael Sydor; Neal Jahren; W. C. Mitchel; W. V. Lampert; T. W. Haas; M. Y. Yen; S. M. Mudare; D. H. Tomich

doi:10.1063/1.344532

Photoreflectance of Al_xGa_1-xAs and Al _xGa_1-xAs/GaAs interfaces and high-electron-mobility transistors

Michael Sydor, Neal Jahren, W. C. Mitchel, W. V. Lampert, T. W. Haas, M. Y. Yen, S. M. Mudare, D. H. Tomich

Ecology, Evolution and Behavior

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Abstract

Photoreflectance is used to measure Al_xGa_1-xAs composition, and to determine carrier concentrations in Si-doped AlGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photoreflectance from the cap/(doped AlGaAs) interface produces a broad signal which distorts the entire spectrum, making it hard to locate the GaAs and AlGaAs band edges precisely. A similar broad signal from modulation-doped heterostructures is apparently associated with samples that show the presence of two-dimensional electron gas.

Original language	English (US)
Pages (from-to)	7423-7429
Number of pages	7
Journal	Journal of Applied Physics
Volume	67
Issue number	12
DOIs	https://doi.org/10.1063/1.344532
State	Published - 1990

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title = "Photoreflectance of AlxGa1-xAs and Al xGa1-xAs/GaAs interfaces and high-electron-mobility transistors",

abstract = "Photoreflectance is used to measure AlxGa1-xAs composition, and to determine carrier concentrations in Si-doped AlGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photoreflectance from the cap/(doped AlGaAs) interface produces a broad signal which distorts the entire spectrum, making it hard to locate the GaAs and AlGaAs band edges precisely. A similar broad signal from modulation-doped heterostructures is apparently associated with samples that show the presence of two-dimensional electron gas.",

author = "Michael Sydor and Neal Jahren and Mitchel, {W. C.} and Lampert, {W. V.} and Haas, {T. W.} and Yen, {M. Y.} and Mudare, {S. M.} and Tomich, {D. H.}",

year = "1990",

doi = "10.1063/1.344532",

language = "English (US)",

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AU - Sydor, Michael

AU - Jahren, Neal

AU - Mitchel, W. C.

AU - Lampert, W. V.

AU - Haas, T. W.

AU - Yen, M. Y.

AU - Mudare, S. M.

AU - Tomich, D. H.

PY - 1990

Y1 - 1990

N2 - Photoreflectance is used to measure AlxGa1-xAs composition, and to determine carrier concentrations in Si-doped AlGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photoreflectance from the cap/(doped AlGaAs) interface produces a broad signal which distorts the entire spectrum, making it hard to locate the GaAs and AlGaAs band edges precisely. A similar broad signal from modulation-doped heterostructures is apparently associated with samples that show the presence of two-dimensional electron gas.

AB - Photoreflectance is used to measure AlxGa1-xAs composition, and to determine carrier concentrations in Si-doped AlGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photoreflectance from the cap/(doped AlGaAs) interface produces a broad signal which distorts the entire spectrum, making it hard to locate the GaAs and AlGaAs band edges precisely. A similar broad signal from modulation-doped heterostructures is apparently associated with samples that show the presence of two-dimensional electron gas.

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Photoreflectance of Al_xGa_1-xAs and Al _xGa_1-xAs/GaAs interfaces and high-electron-mobility transistors

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