Photosensitization effects of 5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide(TAPPI) on n-Si(111) and n-GaAs(100) were studied by surface photovoltage spectroscopy. n-Si can be sensitized only in the Soret band absorption region of the TAPPI molecule, n-GaAs can be sensitized in the whole irradiation region (hv>Eg). The diagrams of energetic level correlation between the TAPPI molecule and the two semiconductor substrates were determined by cyclic voltammetric measurement and, on the basis of them, the different photosensitization effects of TAPPI on n-Si and n-GaAs are explained reasonably.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Photochemistry and Photobiology A: Chemistry|
|State||Published - Jan 31 1998|
Bibliographical noteFunding Information:
We gratefully acknowledge the support of the National Natural Science Foundation of China.
- 5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide