Photosensitization effects of porphyrin on n-Si(111) and n-GaAs(100)

Jihua Yang, Jie Zhang, Dejun Wang, Yubai Bai, Haoran Sun, Dongfang Shen, Tiejin Li

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Photosensitization effects of 5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide(TAPPI) on n-Si(111) and n-GaAs(100) were studied by surface photovoltage spectroscopy. n-Si can be sensitized only in the Soret band absorption region of the TAPPI molecule, n-GaAs can be sensitized in the whole irradiation region (hv>Eg). The diagrams of energetic level correlation between the TAPPI molecule and the two semiconductor substrates were determined by cyclic voltammetric measurement and, on the basis of them, the different photosensitization effects of TAPPI on n-Si and n-GaAs are explained reasonably.

Original languageEnglish (US)
Pages (from-to)225-229
Number of pages5
JournalJournal of Photochemistry and Photobiology A: Chemistry
Volume112
Issue number2-3
DOIs
StatePublished - Jan 31 1998

Bibliographical note

Funding Information:
We gratefully acknowledge the support of the National Natural Science Foundation of China.

Keywords

  • 5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide
  • Photosensitization
  • n-GaAs
  • n-Si

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