Photosensitization effects of porphyrin on n-Si(111) and n-GaAs(100)

Jihua Yang; Jie Zhang; Dejun Wang; Yubai Bai; Haoran Sun; Dongfang Shen; Tiejin Li

doi:10.1016/S1010-6030(97)00217-7

Photosensitization effects of porphyrin on n-Si(111) and n-GaAs(100)

Jihua Yang, Jie Zhang, Dejun Wang, Yubai Bai, Haoran Sun, Dongfang Shen, Tiejin Li

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Photosensitization effects of 5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide(TAPPI) on n-Si(111) and n-GaAs(100) were studied by surface photovoltage spectroscopy. n-Si can be sensitized only in the Soret band absorption region of the TAPPI molecule, n-GaAs can be sensitized in the whole irradiation region (hv>E_g). The diagrams of energetic level correlation between the TAPPI molecule and the two semiconductor substrates were determined by cyclic voltammetric measurement and, on the basis of them, the different photosensitization effects of TAPPI on n-Si and n-GaAs are explained reasonably.

Original language	English (US)
Pages (from-to)	225-229
Number of pages	5
Journal	Journal of Photochemistry and Photobiology A: Chemistry
Volume	112
Issue number	2-3
DOIs	https://doi.org/10.1016/S1010-6030(97)00217-7
State	Published - Jan 31 1998

Bibliographical note

Funding Information:
We gratefully acknowledge the support of the National Natural Science Foundation of China.

Keywords

5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide
Photosensitization
n-GaAs
n-Si

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@article{2fde008ef67c4aa2b82f5805ac6b237a,

title = "Photosensitization effects of porphyrin on n-Si(111) and n-GaAs(100)",

abstract = "Photosensitization effects of 5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide(TAPPI) on n-Si(111) and n-GaAs(100) were studied by surface photovoltage spectroscopy. n-Si can be sensitized only in the Soret band absorption region of the TAPPI molecule, n-GaAs can be sensitized in the whole irradiation region (hv>Eg). The diagrams of energetic level correlation between the TAPPI molecule and the two semiconductor substrates were determined by cyclic voltammetric measurement and, on the basis of them, the different photosensitization effects of TAPPI on n-Si and n-GaAs are explained reasonably.",

keywords = "5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide, Photosensitization, n-GaAs, n-Si",

author = "Jihua Yang and Jie Zhang and Dejun Wang and Yubai Bai and Haoran Sun and Dongfang Shen and Tiejin Li",

note = "Funding Information: We gratefully acknowledge the support of the National Natural Science Foundation of China.",

year = "1998",

month = jan,

day = "31",

doi = "10.1016/S1010-6030(97)00217-7",

language = "English (US)",

volume = "112",

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TY - JOUR

T1 - Photosensitization effects of porphyrin on n-Si(111) and n-GaAs(100)

AU - Yang, Jihua

AU - Zhang, Jie

AU - Wang, Dejun

AU - Bai, Yubai

AU - Sun, Haoran

AU - Shen, Dongfang

AU - Li, Tiejin

N1 - Funding Information: We gratefully acknowledge the support of the National Natural Science Foundation of China.

PY - 1998/1/31

Y1 - 1998/1/31

N2 - Photosensitization effects of 5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide(TAPPI) on n-Si(111) and n-GaAs(100) were studied by surface photovoltage spectroscopy. n-Si can be sensitized only in the Soret band absorption region of the TAPPI molecule, n-GaAs can be sensitized in the whole irradiation region (hv>Eg). The diagrams of energetic level correlation between the TAPPI molecule and the two semiconductor substrates were determined by cyclic voltammetric measurement and, on the basis of them, the different photosensitization effects of TAPPI on n-Si and n-GaAs are explained reasonably.

AB - Photosensitization effects of 5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide(TAPPI) on n-Si(111) and n-GaAs(100) were studied by surface photovoltage spectroscopy. n-Si can be sensitized only in the Soret band absorption region of the TAPPI molecule, n-GaAs can be sensitized in the whole irradiation region (hv>Eg). The diagrams of energetic level correlation between the TAPPI molecule and the two semiconductor substrates were determined by cyclic voltammetric measurement and, on the basis of them, the different photosensitization effects of TAPPI on n-Si and n-GaAs are explained reasonably.

KW - 5,10,15,20-tetrakis-(4-trimethylaminephenyl) porphyrin tetraiodide

KW - Photosensitization

KW - n-GaAs

KW - n-Si

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JO - Journal of Photochemistry and Photobiology A: Chemistry

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