Piecewise diffusion of the silicon dimer

Brian Borovsky, Michael Krueger, Eric Ganz

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

We present a detailed view of the diffusion of silicon dimers on the silicon (001) surface. Through a combination of atom tracking and ab initio modeling, the dimer is shown to move one atom at a time rather than as a two-atom unit. The details of the pathway depend on the diffusion channel: On top of dimer rows, the two atoms of a dimer separate but remain bound during diffusion. In the troughs between dimer rows, the two atoms separate completely and move independently before rejoining in a new location.

Original languageEnglish (US)
Pages (from-to)1598-1601
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number3
DOIs
StatePublished - Jan 1 1999

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