TY - JOUR
T1 - Plasma passivation of III-V semiconductor surfaces
AU - Aydil, E. S.
AU - Gottscho, R. A.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - Poor electronic properties of III-V semiconductor surfaces and semiconductor-insulator interfaces resulting from a high density of surface/interface states limit III-V device technology. For this reason, passivation of III-V surfaces, in particular plasma passivation, has received attention in the last two decades. In this chapter, we review these research efforts with emphasis on in situ and real-time diagnostic methods to detect chemical and electronic changes on surfaces upon passivation. Hydrogen-atom based plasma passivation techniques, using H2, NH3, and H2S, have emerged as viable methods for removing surface states and native oxides. Improvements in III-V device performance can be made with judicious choice of the plasma operating parameters such as plasma excitation method, pressure, power, flow rate and substrate temperature. In situ and real-time surface diagnostic methods, such as photoluminescence monitoring and attenuated-total-reflection Fourier transform infrared spectroscopy (ATR-FTIR), are crucial for optimizing the process conditions.
AB - Poor electronic properties of III-V semiconductor surfaces and semiconductor-insulator interfaces resulting from a high density of surface/interface states limit III-V device technology. For this reason, passivation of III-V surfaces, in particular plasma passivation, has received attention in the last two decades. In this chapter, we review these research efforts with emphasis on in situ and real-time diagnostic methods to detect chemical and electronic changes on surfaces upon passivation. Hydrogen-atom based plasma passivation techniques, using H2, NH3, and H2S, have emerged as viable methods for removing surface states and native oxides. Improvements in III-V device performance can be made with judicious choice of the plasma operating parameters such as plasma excitation method, pressure, power, flow rate and substrate temperature. In situ and real-time surface diagnostic methods, such as photoluminescence monitoring and attenuated-total-reflection Fourier transform infrared spectroscopy (ATR-FTIR), are crucial for optimizing the process conditions.
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M3 - Article
AN - SCOPUS:18544406382
SN - 0255-5476
VL - 148-4
SP - 159
EP - 188
JO - Materials Science Forum
JF - Materials Science Forum
ER -