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Plasma passivation of III-V semiconductor surfaces
E. S. Aydil
, R. A. Gottscho
Chemical Engineering and Materials Science
Research output
:
Contribution to journal
›
Article
›
peer-review
11
Scopus citations
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Engineering & Materials Science
III-V semiconductors
100%
Passivation
72%
Plasmas
55%
Photoluminescence
19%
Electronic properties
18%
Interface states
18%
Surface states
17%
Fourier transform infrared spectroscopy
14%
Atoms
12%
Semiconductor materials
10%
Oxides
10%
Hydrogen
9%
Flow rate
9%
Substrates
8%
Monitoring
6%
Temperature
4%
Chemical Compounds
Chemical Passivation
61%
Semiconductor
45%
Plasma
37%
Surface
19%
Interface State
18%
Surface State
14%
Attenuated Total Reflection
13%
Hydrogen Atom
10%
Electronic Property
9%
Flow Kinetics
9%
Photoluminescence
9%
Pressure
6%
Fourier Transform Infrared Spectroscopy
6%
Oxide
6%
Physics & Astronomy
passivity
55%
electronics
10%
hydrogen atoms
9%
infrared spectroscopy
9%
flow velocity
8%
insulators
7%
photoluminescence
7%
oxides
6%
excitation
4%
performance
4%
temperature
2%