Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO2 system and N incorporation

A. Stesmans; V. V. Afanas'ev; K. Clémerl; F. Chen; S. A. Campbell

Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO₂ system and N incorporation

A. Stesmans, V. V. Afanas'ev, K. Clémerl, F. Chen, S. A. Campbell

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An electron spin resonance (ESR) analysis of (100)Si/HfO₂ entities with ultrathin layers of amorphous (a)-HfO₂ deposited by distinct chemical vapor deposition (CVD) techniques is presented. As expected the main ESR signals observed in the as-grown samples and after VUV irradiation were P_b-type defects. However, using Hf(NO₃)₄ as a precursor, the incorporation of N is revealed after ⁶⁰Co γ-irradiation through the observation of a prominent ESR powder pattern, which via ESR measurements at two observational frequencies has been indisputably identified as originating from NO₂ radicals. The molecules are found to be stabilized and likely homogeneously distributed in the a-HfO₂ network, Some network forming N entity is suggested as a precursor, transformed into ESR-active NO₂ upon γ-irradiation. The interesting N incorporation into the HfO₂: network appears inherent to the particular nitrato CVD process. Electrical C-V measurements in combination with photogeneration of charge carriers suggest, generally, hole trapping as dominant trapping process. Enhanced electron trapping, only observed for the nitrato CVD process, is indicated to be correlated with N-associated centers.

Original language	English (US)
Title of host publication	Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium
Editors	R.E. Sah, M.J. Deen, J. Zhang, J. Yota, Y. Kamakura
Pages	403-416
Number of pages	14
Volume	PV 2005-01
State	Published - Dec 1 2005
Event	207th ECS Meeting - Quebec, Canada Duration: May 16 2005 → May 20 2005

Other

Other	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	5/16/05 → 5/20/05

OpenUrl availability

Full text

Cite this

Stesmans, A., Afanas'ev, V. V., Clémerl, K., Chen, F., & Campbell, S. A. (2005). Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO₂ system and N incorporation. In R. E. Sah, M. J. Deen, J. Zhang, J. Yota, & Y. Kamakura (Eds.), Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium (Vol. PV 2005-01, pp. 403-416)

Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO₂ system and N incorporation. / Stesmans, A.; Afanas'ev, V. V.; Clémerl, K. et al.
Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium. ed. / R.E. Sah; M.J. Deen; J. Zhang; J. Yota; Y. Kamakura. Vol. PV 2005-01 2005. p. 403-416.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Stesmans, A, Afanas'ev, VV, Clémerl, K, Chen, F & Campbell, SA 2005, Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO₂ system and N incorporation. in RE Sah, MJ Deen, J Zhang, J Yota & Y Kamakura (eds), Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium. vol. PV 2005-01, pp. 403-416, 207th ECS Meeting, Quebec, Canada, 5/16/05.

Stesmans A, Afanas'ev VV, Clémerl K, Chen F, Campbell SA. Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO₂ system and N incorporation. In Sah RE, Deen MJ, Zhang J, Yota J, Kamakura Y, editors, Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium. Vol. PV 2005-01. 2005. p. 403-416

Stesmans, A. ; Afanas'ev, V. V. ; Clémerl, K. et al. / Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance : The Si/HFO₂ system and N incorporation. Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium. editor / R.E. Sah ; M.J. Deen ; J. Zhang ; J. Yota ; Y. Kamakura. Vol. PV 2005-01 2005. pp. 403-416

@inproceedings{0d5f5a2c491244e1a615e8df1f8e20e0,

title = "Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO2 system and N incorporation",

abstract = "An electron spin resonance (ESR) analysis of (100)Si/HfO2 entities with ultrathin layers of amorphous (a)-HfO2 deposited by distinct chemical vapor deposition (CVD) techniques is presented. As expected the main ESR signals observed in the as-grown samples and after VUV irradiation were Pb-type defects. However, using Hf(NO3)4 as a precursor, the incorporation of N is revealed after 60Co γ-irradiation through the observation of a prominent ESR powder pattern, which via ESR measurements at two observational frequencies has been indisputably identified as originating from NO2 radicals. The molecules are found to be stabilized and likely homogeneously distributed in the a-HfO2 network, Some network forming N entity is suggested as a precursor, transformed into ESR-active NO2 upon γ-irradiation. The interesting N incorporation into the HfO2: network appears inherent to the particular nitrato CVD process. Electrical C-V measurements in combination with photogeneration of charge carriers suggest, generally, hole trapping as dominant trapping process. Enhanced electron trapping, only observed for the nitrato CVD process, is indicated to be correlated with N-associated centers.",

author = "A. Stesmans and Afanas'ev, {V. V.} and K. Cl{\'e}merl and F. Chen and Campbell, {S. A.}",

year = "2005",

month = dec,

day = "1",

language = "English (US)",

volume = "PV 2005-01",

pages = "403--416",

editor = "R.E. Sah and M.J. Deen and J. Zhang and J. Yota and Y. Kamakura",

booktitle = "Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

}

TY - GEN

T1 - Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance

T2 - 207th ECS Meeting

AU - Stesmans, A.

AU - Afanas'ev, V. V.

AU - Clémerl, K.

AU - Chen, F.

AU - Campbell, S. A.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - An electron spin resonance (ESR) analysis of (100)Si/HfO2 entities with ultrathin layers of amorphous (a)-HfO2 deposited by distinct chemical vapor deposition (CVD) techniques is presented. As expected the main ESR signals observed in the as-grown samples and after VUV irradiation were Pb-type defects. However, using Hf(NO3)4 as a precursor, the incorporation of N is revealed after 60Co γ-irradiation through the observation of a prominent ESR powder pattern, which via ESR measurements at two observational frequencies has been indisputably identified as originating from NO2 radicals. The molecules are found to be stabilized and likely homogeneously distributed in the a-HfO2 network, Some network forming N entity is suggested as a precursor, transformed into ESR-active NO2 upon γ-irradiation. The interesting N incorporation into the HfO2: network appears inherent to the particular nitrato CVD process. Electrical C-V measurements in combination with photogeneration of charge carriers suggest, generally, hole trapping as dominant trapping process. Enhanced electron trapping, only observed for the nitrato CVD process, is indicated to be correlated with N-associated centers.

AB - An electron spin resonance (ESR) analysis of (100)Si/HfO2 entities with ultrathin layers of amorphous (a)-HfO2 deposited by distinct chemical vapor deposition (CVD) techniques is presented. As expected the main ESR signals observed in the as-grown samples and after VUV irradiation were Pb-type defects. However, using Hf(NO3)4 as a precursor, the incorporation of N is revealed after 60Co γ-irradiation through the observation of a prominent ESR powder pattern, which via ESR measurements at two observational frequencies has been indisputably identified as originating from NO2 radicals. The molecules are found to be stabilized and likely homogeneously distributed in the a-HfO2 network, Some network forming N entity is suggested as a precursor, transformed into ESR-active NO2 upon γ-irradiation. The interesting N incorporation into the HfO2: network appears inherent to the particular nitrato CVD process. Electrical C-V measurements in combination with photogeneration of charge carriers suggest, generally, hole trapping as dominant trapping process. Enhanced electron trapping, only observed for the nitrato CVD process, is indicated to be correlated with N-associated centers.

UR - http://www.scopus.com/inward/record.url?scp=31844434161&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31844434161&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:31844434161

VL - PV 2005-01

SP - 403

EP - 416

BT - Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium

A2 - Sah, R.E.

A2 - Deen, M.J.

A2 - Zhang, J.

A2 - Yota, J.

A2 - Kamakura, Y.

Y2 - 16 May 2005 through 20 May 2005

ER -

Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO₂ system and N incorporation

Abstract

Other

OpenUrl availability

Other files and links

Fingerprint

Cite this