Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO2 system and N incorporation

A. Stesmans, V. V. Afanas'ev, K. Clémerl, F. Chen, S. A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution


An electron spin resonance (ESR) analysis of (100)Si/HfO2 entities with ultrathin layers of amorphous (a)-HfO2 deposited by distinct chemical vapor deposition (CVD) techniques is presented. As expected the main ESR signals observed in the as-grown samples and after VUV irradiation were Pb-type defects. However, using Hf(NO3)4 as a precursor, the incorporation of N is revealed after 60Co γ-irradiation through the observation of a prominent ESR powder pattern, which via ESR measurements at two observational frequencies has been indisputably identified as originating from NO2 radicals. The molecules are found to be stabilized and likely homogeneously distributed in the a-HfO2 network, Some network forming N entity is suggested as a precursor, transformed into ESR-active NO2 upon γ-irradiation. The interesting N incorporation into the HfO2: network appears inherent to the particular nitrato CVD process. Electrical C-V measurements in combination with photogeneration of charge carriers suggest, generally, hole trapping as dominant trapping process. Enhanced electron trapping, only observed for the nitrato CVD process, is indicated to be correlated with N-associated centers.

Original languageEnglish (US)
Title of host publicationSilicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII - Proceedings of the International Symposium
EditorsR.E. Sah, M.J. Deen, J. Zhang, J. Yota, Y. Kamakura
Number of pages14
VolumePV 2005-01
StatePublished - Dec 1 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005


Other207th ECS Meeting


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