Point defects and traps in stacks of ultrathin high-κ metal oxides on Si probed by electron spin resonance: The Si/HFO2 system and N incorporation

A. Stesmans, V. V. Afanas'ev, K. Clémerl, F. Chen, S. A. Campbell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Engineering & Materials Science