Abstract
In this letter, we report the theoretical modeling and the fabrication of polarization-insensitive optical amplifiers at 1300 nm in AlInGaAs-InP material system. Gain calculations, using the k.p method, show that the introduction of 0.33% tensile strain into a three-quantum-well structure can achieve gain-matching over a wide energy spectrum. The amplifiers, fabricated and tested, show excellent polarization insensitivity (less than 0.3 dB) at 1280 nm with a gain of 11 dB at 150 mA. Gain-bandwidth needs to be improved by employing antireflection coatings to suppress the facet reflectivity.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 779-781 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 13 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 2001 |
Bibliographical note
Funding Information:Manuscript received November 27, 2000; revised April 23, 2001. This work was supported by the Defense Advanced Research Projects Agency and by the Air Force Office of Scientific Research. P. Koonath and A. Gopinath are with the Department of Electrical Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: prakash@ece.umn.edu and gopinath@ece.umn.edu). S. Kim is with the Korea Telecom, Access Network Research Laboratory, 305–348 Taejon, Korea (e-mail: sangin@kt.co.kr). W.-J. Cho is with the Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea (e-mail: wooncho@kistmail.kist.re.kr). Publisher Item Identifier S 1041-1135(01)06438-2.
Keywords
- Integrated optics
- Polarization
- Quantum wells
- Semiconductor optical amplifier
- Tensile strain