TY - JOUR
T1 - Polymeric integrated AC follower circuit with a JFET as an active device
AU - Liu, Yuxin
AU - Cui, Tianhong
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2005/3
Y1 - 2005/3
N2 - In this paper, successfully combining UV lithography and ink-jet printing techniques, we have fabricated a polymer-based AC follower circuit, including a polymer junction field-effect transistor (JFET) as the active device, and an ink-jet printed conductive polymer resistor. The polymer JFET, using poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDT/PSS) as the channel and poly (2,5-hexyloxy p-phenylene cyanovinylene) (CNPPV) as the gate, was fabricated by the conventional ultraviolet (UV) lithography techniques. As measured, the JFET's pinch-off voltage reaches 1 V that is in the applicable range, and the current is 13.8 μA at zero gate bias. By integrating the JFET and the polymer resistor, we tracked the frequency response of the follower circuit, and the circuit shows good frequency following features when the frequencies are higher than 10 kHz. Furthermore, the factors influencing the performance of the circuit, including the effects of load resistors, the JFET parameters, and the fabrication techniques, are discussed.
AB - In this paper, successfully combining UV lithography and ink-jet printing techniques, we have fabricated a polymer-based AC follower circuit, including a polymer junction field-effect transistor (JFET) as the active device, and an ink-jet printed conductive polymer resistor. The polymer JFET, using poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDT/PSS) as the channel and poly (2,5-hexyloxy p-phenylene cyanovinylene) (CNPPV) as the gate, was fabricated by the conventional ultraviolet (UV) lithography techniques. As measured, the JFET's pinch-off voltage reaches 1 V that is in the applicable range, and the current is 13.8 μA at zero gate bias. By integrating the JFET and the polymer resistor, we tracked the frequency response of the follower circuit, and the circuit shows good frequency following features when the frequencies are higher than 10 kHz. Furthermore, the factors influencing the performance of the circuit, including the effects of load resistors, the JFET parameters, and the fabrication techniques, are discussed.
KW - Integrated circuit
KW - JFET
KW - Polymer
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U2 - 10.1016/j.sse.2004.11.008
DO - 10.1016/j.sse.2004.11.008
M3 - Article
AN - SCOPUS:12344314576
SN - 0038-1101
VL - 49
SP - 445
EP - 448
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 3
ER -