Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

Seung Wook Shin, G. L. Agawane, Myeng Gil Gang, A. V. Moholkar, Jong Ha Moon, Jin Hyeok Kim, Jeong Yong Lee

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

Zinc sulfide (ZnS) thin films were prepared on glass substrates by a chemical bath deposition technique using aqueous zinc acetate and thiourea solutions in a basic medium (pH ∼ 10) at 80 °C. The effects of different complexing agents, such as a non-complexing agent, Na 3-citrate, and a mixture of Na 3-citrate and ethylenediamine tetra-acetate (EDTA), on the structural, chemical, morphological, optical, and electrical properties of ZnS thin films were investigated. X-ray diffraction pattern showed that the ZnS thin film deposited without any complexing agent was grown on an amorphous phase. However, the ZnS thin films deposited with one or two complexing agents showed a polycrystalline hexagonal structure. No secondary phase (ZnO) was observed. X-ray photoelectron spectroscopy showed that all ZnS thin films exhibited both ZnS and ZnOH bindings. Field emission scanning electron microscopy (FE-SEM) images showed that ZnS thin films deposited with complexing agents had thicker thicknesses than that deposited without a complexing agent. The electrical resistivity of ZnS thin films was over 10 5 Ω cm regardless of complexing agents. The average transmittance of the ZnS thin films deposited without a complexing agent, those with Na 3-citrate, and those with a mixture of Na 3-citrate and EDTA was approximately 85%, 65%, and 70%, respectively, while the band gap was found to be 3.94 eV, 3.87 eV, and 3.84 eV, respectively.

Original languageEnglish (US)
Pages (from-to)25-30
Number of pages6
JournalJournal of Alloys and Compounds
Volume526
DOIs
StatePublished - Jun 15 2012

Bibliographical note

Funding Information:
This research was partially supported by the Ho-Nam Leading Industry Office through the Leading Industry Development for Economic Region and partially by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MEST-No. 2011-0001002 ).

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

Keywords

  • Buffer layer
  • Chemical bath deposition
  • Complexing agent
  • Thin film solar cells
  • ZnS

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