The SiC static induction transistor (SIT) has been demonstrated and has shown an excellent performance in high-power and ultrahigh-frequency fields. Now a bipolar SIT (BSIT), which is made from silicon carbide, is reported on in this work. The process of the 4H-SiC BSIT's fabrication is listed, too. Moreover, the electrical and thermal properties of the 4H-SiC BSIT are discussed. To exhibit the 4H-SiC BSIT's superior properties, it is compared with a silicon device and it has been deduced that the most prominent adjustment in structure is the base depth. Some differences in the properties exhibited can be attributed to the adjustment of base depth and they are explained in detail.