A method that combines radio frequency (RF) plasma with hot filament (HF) chemical vapor deposition (CVD) together has been used to grow silicon carbide film with large area on φ76 mm silicon substrate. The experimental instrument here is the modified conventional RF apparatus (13.56 MHz), with CH4 as reaction vapor. The growth of large area β-SiC film has been realized through adjustment of the number of carbon atoms on the surface for nucleation. The samples obtained through the above method have been systematically investigated by atom force microscopy (AFM), X-ray diffraction (XRD). The result has shown that the whole film on substrate exhibits low stress, good adhesivity and high homogeneity.
|Original language||English (US)|
|Journal||Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics|
|State||Published - May 1 2005|
- Plasma chemical vapor deposition
- Silicon carbide