Preparation of (SiFe)C DMS based 4H-SiC substrate

Yanfeng Jiang, Jianping Wang

Research output: Contribution to journalArticlepeer-review

Abstract

A diluted magnetic 4H-SiC has been prepared by implanting Fe ions into the substrate. Its Curie temperature reaches as high as 320 K and its technology is compatible with current IC. Moreover, the process includes three annealing steps, named HNH annealing in this paper. Each step during this annealing has been analyzed. Comparisons have been made with different Fe concentrations and experimental results demonstrate that when the concentration of Fe is 0.051, the Curie temperature is the highest. According to measurements, some explanation of this phenomenon is given.

Original languageEnglish (US)
Pages (from-to)1436-1440
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume29
Issue number8
StatePublished - Aug 1 2008

Keywords

  • Annealing
  • Curie temperature
  • Diluted magnetic semiconductor
  • Spintronics

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