A diluted magnetic 4H-SiC has been prepared by implanting Fe ions into the substrate. Its Curie temperature reaches as high as 320 K and its technology is compatible with current IC. Moreover, the process includes three annealing steps, named HNH annealing in this paper. Each step during this annealing has been analyzed. Comparisons have been made with different Fe concentrations and experimental results demonstrate that when the concentration of Fe is 0.051, the Curie temperature is the highest. According to measurements, some explanation of this phenomenon is given.
|Original language||English (US)|
|Number of pages||5|
|Journal||Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors|
|State||Published - Aug 1 2008|
- Curie temperature
- Diluted magnetic semiconductor