Abstract
Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm-2 V-1 s-1), low operation voltage (<2 V), and good electrical/mechanical stabilities.
Original language | English (US) |
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Pages (from-to) | 3413-3418 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 25 |
Issue number | 25 |
DOIs | |
State | Published - Jul 5 2013 |
Keywords
- electrolyte gated transistors (EGTs)
- flexible substrates
- ion-gel gate insulators
- printed ZnO transistors
- thin-film transistors