Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic

Kihyon Hong, Se Hyun Kim, Keun Hyung Lee, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

112 Scopus citations

Abstract

Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm-2 V-1 s-1), low operation voltage (<2 V), and good electrical/mechanical stabilities.

Original languageEnglish (US)
Pages (from-to)3413-3418
Number of pages6
JournalAdvanced Materials
Volume25
Issue number25
DOIs
StatePublished - Jul 5 2013

Keywords

  • electrolyte gated transistors (EGTs)
  • flexible substrates
  • ion-gel gate insulators
  • printed ZnO transistors
  • thin-film transistors

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