Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm-2 V-1 s-1), low operation voltage (<2 V), and good electrical/mechanical stabilities.
- electrolyte gated transistors (EGTs)
- flexible substrates
- ion-gel gate insulators
- printed ZnO transistors
- thin-film transistors