TY - JOUR
T1 - Probing Metastable Space-Charge Potentials in a Wide Band Gap Semiconductor
AU - Lozovoi, Artur
AU - Jayakumar, Harishankar
AU - Daw, Damon
AU - Lakra, Ayesha
AU - Meriles, Carlos A.
N1 - Publisher Copyright:
© 2020 American Physical Society.
PY - 2020/12/18
Y1 - 2020/12/18
N2 - While the study of space-charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide band gap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape- A nd concomitant field-can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space-charge field, which we then exploit to show space-charge-induced carrier guiding.
AB - While the study of space-charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide band gap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape- A nd concomitant field-can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space-charge field, which we then exploit to show space-charge-induced carrier guiding.
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U2 - 10.1103/PhysRevLett.125.256602
DO - 10.1103/PhysRevLett.125.256602
M3 - Article
C2 - 33416343
AN - SCOPUS:85098114483
SN - 0031-9007
VL - 125
JO - Physical review letters
JF - Physical review letters
IS - 25
M1 - 256602
ER -