Voltage controlled magnetic anisotropy (VCMA) is a novel method to switch magnetizations in low-power and ultra-fast applications based on magnetic tunnel junctions (MTJs). Here we explore the ferromagnetic resonance (FMR) technique to probe VCMA in situations where other methods cannot be applied. We quantify VCMA in CoFeB/MgO/CoFeB MTJ nanopillars with in-plane magnetizations where our FMR method is unique in providing direct information about VCMA. We observe a quadratic shift of the FMR resonance field when a voltage bias is applied across the MTJ. The VCMA energy corresponding to the quadratic shift varies with an energy factor of 8.2μJ/m2 for 1 V2/nm2. These results are important for understanding magnetodynamics in MTJ-based applications with in-plane magnetizations.
Bibliographical noteFunding Information:
This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.