A programmable spintronics logic device was designed and fabricated based on a single pinned magnetic tunnel junction (MTJ) element. In this work, a current input line C passing through the MTJ element itself was introduced. Two separated input current lines (A and B) could switch the magnetization of the pinned layer under the heat assistance from line C. Full logic functions (AND, OR, NAND, NOR, XOR, and XNOR) can be realized based on a normal pinned and a synthetic pinned MTJ element. A Wheatstone bridge was engineered to read this single MTJ element logic device. MTJ elements with 1 μ m2 and normal pinned structure: (Ta 30 ÅNiFe 40 Å MnIr 35 ÅCoFe 30 Å (Al 7 Å) +oxidationCoFe 30 ÅNiFe 40 ÅTa 200 Å), have low resistance of 6.3 Ω and high resistance of 7.2 Ω, which gives the magnetoresistive (MR) ratio of 14%. Approximately a 3-mV output difference is obtained between logical 1 and 0.