Properties of high-k/ultrahigh purity silicon nitride stacks

X. Shi; M. Shriver; Z. Zhang; T. Higman; S. A. Campbell

doi:10.1116/1.1759355

Properties of high-k/ultrahigh purity silicon nitride stacks

X. Shi, M. Shriver, Z. Zhang, T. Higman, S. A. Campbell

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The application of ultrahigh purity (UHP) silicon nitride as a barrier layer to reduce the reaction of high-k materials was discussed. UHP Si ₃₄ was grown by rapid thermal nitridation (RTN) in chemically scrubbed ammonia in an ultrahigh vacuum (UHV) chamber. It was found that the effective charge density of UHP Si ₃N ₄ increased with the thickness of nitride layer. The self-limiting thickness was found to increase by about 0.2 nm per 100°C nitridation temperature form 500 to 900°C.

Original language	English (US)
Pages (from-to)	1146-1151
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1759355
State	Published - Jul 2004

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Properties of high-k/ultrahigh purity silicon nitride stacks

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