The application of ultrahigh purity (UHP) silicon nitride as a barrier layer to reduce the reaction of high-k materials was discussed. UHP Si 34 was grown by rapid thermal nitridation (RTN) in chemically scrubbed ammonia in an ultrahigh vacuum (UHV) chamber. It was found that the effective charge density of UHP Si 3N 4 increased with the thickness of nitride layer. The self-limiting thickness was found to increase by about 0.2 nm per 100°C nitridation temperature form 500 to 900°C.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - Jul 2004|