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Properties of n-i-p-i doping sljperlattices in III-V and IV-VI semiconductors
G. H. Döhler, P. Ruden
Electrical and Computer Engineering
Research output
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Contribution to journal
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Article
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peer-review
19
Scopus citations
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Dive into the research topics of 'Properties of n-i-p-i doping sljperlattices in III-V and IV-VI semiconductors'. Together they form a unique fingerprint.
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Engineering & Materials Science
IV-VI semiconductors
100%
Superlattices
44%
Doping (additives)
44%
Semiconductor superlattices
17%
Electronic states
12%
Electronic properties
12%
Electronic structure
11%
Luminescence
11%
Impurities
7%
Scattering
7%
Magnetic fields
6%
Modulation
6%
Experiments
2%
Chemical Compounds
Superlattice
40%
Semiconductor
30%
Electronic State
9%
Subband
9%
Magnetic Field
6%
Electronic Property
5%
Luminiscence Type
4%
Physics & Astronomy
superlattices
30%
electronics
8%
luminescence
6%
electronic structure
5%
modulation
5%
impurities
5%
scattering
4%
magnetic fields
3%