Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performance

Nazila Haratipour; Steven J. Koester

doi:10.1109/SNW.2016.7577986

Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performance

Nazila Haratipour, Steven J. Koester

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigate the I_OFF vs. I_ON performance of black phosphorus (BP) MOSFETs with thin HfO₂ gate dielectrics. I_ON and I_OFF were found to increase with increasing the BP thickness, with I_OFF increasing substantially at high drain-to-source voltage, V_DS. Specifically, at V_DS = -0.8 V, a body thickness < 7 nm is needed to achieve I_OFF < 100 nA/μm. This work provides critical guidance for design of BP MOSFETs for future logic applications.

Original language	English (US)
Title of host publication	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	62-63
Number of pages	2
ISBN (Electronic)	9781509007264
DOIs	https://doi.org/10.1109/SNW.2016.7577986
State	Published - Sep 27 2016
Event	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States Duration: Jun 12 2016 → Jun 13 2016

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Name	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

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Other	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
Country/Territory	United States
City	Honolulu
Period	6/12/16 → 6/13/16

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10.1109/SNW.2016.7577986

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Haratipour, N., & Koester, S. J. (2016). Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performance. In 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (pp. 62-63). Article 7577986 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7577986

Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performance. / Haratipour, Nazila; Koester, Steven J.
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 62-63 7577986 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Haratipour, N & Koester, SJ 2016, Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performance. in 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016., 7577986, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016, Institute of Electrical and Electronics Engineers Inc., pp. 62-63, 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016, Honolulu, United States, 6/12/16. https://doi.org/10.1109/SNW.2016.7577986

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abstract = "We investigate the IOFF vs. ION performance of black phosphorus (BP) MOSFETs with thin HfO2 gate dielectrics. ION and IOFF were found to increase with increasing the BP thickness, with IOFF increasing substantially at high drain-to-source voltage, VDS. Specifically, at VDS = -0.8 V, a body thickness < 7 nm is needed to achieve IOFF < 100 nA/μm. This work provides critical guidance for design of BP MOSFETs for future logic applications.",

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Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performance

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