Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.
|Original language||English (US)|
|Number of pages||7|
|Journal||[No source information available]|
|State||Published - Dec 1 1971|