QUANTITATIVE VOLTAGE AND TEMPERATURE DISTRIBUTION STUDIES IN GaAs TRANSVERSE GUNN DIODES USING AN SEM.

A. Gopinath, C. C. Sanger, C. Paracchini, G. A.C. Jones

Research output: Contribution to journalArticlepeer-review

Abstract

Scanning electron microscope techniques for time-averaged voltage and temperature distributions are outlined in transverse GaAs Gunn-effect devices which are fabricated on n-type epitaxial layers approximately 10**1**6 electrons per c. c. grown on semi-insulating substrates.

Original languageEnglish (US)
Pages (from-to)456-462
Number of pages7
Journal[No source information available]
StatePublished - Dec 1 1971

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