Random telegraph-switching noise in coplanar current measurements of amorphous silicon

C. E. Parman, N. E. Israeloff, James Kakalios

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Abstract

Resistance fluctuations are reported for n-type doped hydrogenated amorphous silicon (a-Si:H) using a coplanar electrode configuration with effective sample volumes of 10-610-7 cm3. Random telegraph-switching noise is observed with fluctuations as large as R/R10-2 for the temperature range 350<T<425 K. Comparison of two-probe and four-probe measurements confirms that these results are not due to contact noise. The switching noise may result from inhomogeneous current paths arising from the hydrogen microstructure in the a-Si:H which change their resistance value as hydrogen atoms hop from one bonding configuration to another.

Original languageEnglish (US)
Pages (from-to)8391-8394
Number of pages4
JournalPhysical Review B
Volume44
Issue number15
DOIs
StatePublished - 1991

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Copyright 2015 Elsevier B.V., All rights reserved.

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