Reaction and growth of Yb/Hg1-xCdxTe(110) interfaces

A. Raisanen, G. Haugstad, X. Yu, A. Franciosi

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Abstract

Detailed synchrotron radiation photoemission studies of Yb/Hg 1-xCdxTe junctions as a function of Yb coverage were performed at room temperature. Photoemission from physisorbed xenon after cooling the sample to 35 K was also used to examine the local overlayer work function and the development of interface morphology. For Yb coverages less than 6 Å, the data provide evidence for the lateral growth of islands consisting of Yb-Te reaction products involving divalent Yb, and an associated Hg depletion within an 18-Å-thick near-surface layer. Upon island coalescence at an Yb coverage of 6 Å, the formation of a metallic Yb-rich layer at the surface is observed. This layer traps Hg atoms diffusing across the interface through the formation of an Yb-Hg alloy, and is responsible for the nonmonotonic behavior of the Hg interface concentration as a function of Yb coverage.

Original languageEnglish (US)
Pages (from-to)3115-3126
Number of pages12
JournalJournal of Applied Physics
Volume70
Issue number6
DOIs
StatePublished - Dec 1 1991

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