Real-space transfer by hot electron resonant tunneling

T. K. Higman; Jihong Chen; M. S. Hagedorn; F. Williamson

doi:10.1006/spmi.1993.1078

Real-space transfer by hot electron resonant tunneling

T. K. Higman, Jihong Chen, M. S. Hagedorn, F. Williamson

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Demonstrations of real-space transfer transistors have primarily shown real-space transfer current due to thermionic emission of heated channel electrons over low heterostructure barriers. In this paper we demonstrate real-space transfer of hot electrons due to resonant tunneling through multiple AlAs/GaAs/AlAs double barrier structures.

Original language	English (US)
Pages (from-to)	397-400
Number of pages	4
Journal	Superlattices and Microstructures
Volume	13
Issue number	4
DOIs	https://doi.org/10.1006/spmi.1993.1078
State	Published - Jun 1993

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title = "Real-space transfer by hot electron resonant tunneling",

abstract = "Demonstrations of real-space transfer transistors have primarily shown real-space transfer current due to thermionic emission of heated channel electrons over low heterostructure barriers. In this paper we demonstrate real-space transfer of hot electrons due to resonant tunneling through multiple AlAs/GaAs/AlAs double barrier structures.",

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AU - Williamson, F.

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N2 - Demonstrations of real-space transfer transistors have primarily shown real-space transfer current due to thermionic emission of heated channel electrons over low heterostructure barriers. In this paper we demonstrate real-space transfer of hot electrons due to resonant tunneling through multiple AlAs/GaAs/AlAs double barrier structures.

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Real-space transfer by hot electron resonant tunneling

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