Abstract
Techniques available for real time, in situ monitoring of surface chemistry during plasma processing are reviewed. Emphasis is given to recent uses of attenuated-total-reflection Fourier transform infrared (ATR-FTIR) spectroscopy to study surface bond vibrations during plasma cleaning and passivation of Si and GaAs surfaces. Examples are chosen to demonstrate the utility of real-time monitoring of surfaces for developing and optimizing plasma processes used in manufacturing of electronic and optoelectronic devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1381-1388 |
| Number of pages | 8 |
| Journal | Pure and Applied Chemistry |
| Volume | 66 |
| Issue number | 6 |
| DOIs | |
| State | Published - 1994 |