Reduction of Ru underlayer thickness for CoCrPt-SiO2perpendicular recording media

W. K. Shen, Jack Judy, Jianping Wang

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The mechanism of Ta seedlayer to promote (0002) texture in Ru underlayer was found to be mainly due to epitaxial growth of Ru (0002) on Ta (110) with a smooth surface. Relatively high sputtering power and low sputtering pressure as well as an optimized layer thickness are keys to deposit a Ta seedlayer, which can result in a good (0002) texture in Ru layer with a relatively thinner thickness. A Ru intermediate layer deposited at a higher pressure was found to further reduce the overall Ru underlayer thickness without degrading magnetic properties of CoCrPt-SiO2 perpendicular magnetic recording (PMR) layer. All these results were confirmed by the investigation of surface morphology, microstructure, crystal orientation, and magnetic properties, suggesting that through optimizing the deposition process of Ru/Ta layers, the magnetic “spacing loss” of PMR can be greatly suppressed.

Original languageEnglish (US)
Pages (from-to)2381-2383
Number of pages3
JournalIEEE Transactions on Magnetics
Volume42
Issue number10
DOIs
StatePublished - Oct 2006

Keywords

  • CoCrPt-SiO2 perpendicular media
  • Ru underlayer
  • Ta seedlayer
  • X-ray reflectivity
  • exchange de-coupling
  • intermediate layer
  • perpendicular magnetic recording media
  • residual gas
  • surface roughness

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