Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies

Jae Joon Kim, Barry P. Linder, Rahul M. Rao, Tae Hyoung Kim, Pong Fei Lu, Keith A. Jenkins, Chris H. Kim, Aditya Bansal, Saibal Mukhopadhyay, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Scopus citations

Abstract

Ring oscillator (RO) structures that separate NBTI and PBTI effects are implemented in a high-k metal gate technology. The measurement results clearly show significant RO frequency degradation from PBTI as well as NBTI. For comparison, RO structures with the same principle are also implemented in a SiO2/poly-gate technology, where PBTI is negligible. Experimental results show noticeable frequency degradation under NBTI-only stress mode but negligible degradation under PBTI-only mode, which illustrates the validity of the proposed principle and structures.

Original languageEnglish (US)
Title of host publication2011 International Reliability Physics Symposium, IRPS 2011
Pages2B.4.1-2B.4.4
DOIs
StatePublished - Jun 23 2011
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: Apr 10 2011Apr 14 2011

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other49th International Reliability Physics Symposium, IRPS 2011
CountryUnited States
CityMonterey, CA
Period4/10/114/14/11

Keywords

  • Circuit
  • NBTI
  • PBTI
  • Ring Oscillator

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